Datasheets
2SC3512 by:

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92

Part Details for 2SC3512 by Hitachi Ltd

Overview of 2SC3512 by Hitachi Ltd

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Part Details for 2SC3512

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2SC3512 Part Data Attributes

2SC3512 Hitachi Ltd
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2SC3512 Hitachi Ltd RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Package Description CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.05 A
Collector-Base Capacitance-Max 1.6 pF
Collector-Emitter Voltage-Max 11 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.6 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 6000 MHz

Alternate Parts for 2SC3512

This table gives cross-reference parts and alternative options found for 2SC3512. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC3512, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBR911LT1G RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, PLASTIC, CASE 318-08, 3 PIN Advanced Power Technology 2SC3512 vs MMBR911LT1G
KSC2758 RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN Samsung Semiconductor 2SC3512 vs KSC2758
2SC4265 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, CMPAK-3 Hitachi Ltd 2SC3512 vs 2SC4265
BFP182 RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 Infineon Technologies AG 2SC3512 vs BFP182
NE68135-A RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, S Band, Silicon, NPN, LEAD FREE, MICRO-X-4 NEC Electronics Group 2SC3512 vs NE68135-A
2SC4591 Small Signal Bip-TRSs for High Frequency Amplifier, , / Renesas Electronics Corporation 2SC3512 vs 2SC4591
2SC5081 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CMPAK-4 Hitachi Ltd 2SC3512 vs 2SC5081
2SC4092 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4 Renesas Electronics Corporation 2SC3512 vs 2SC4092
BF181 RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN, TO-72, METAL, TO-72, 4 PIN Continental Device India Ltd 2SC3512 vs BF181
KSP10TA NPN Epitaxial Silicon Transistor, 2000-FNFLD onsemi 2SC3512 vs KSP10TA

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