Part Details for 2N60G-T60-K by Unisonic Technologies Co Ltd
Overview of 2N60G-T60-K by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2N60G-T60-K
2N60G-T60-K CAD Models
2N60G-T60-K Part Data Attributes
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2N60G-T60-K
Unisonic Technologies Co Ltd
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Datasheet
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2N60G-T60-K
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-126, HALOGEN FREE PACKAGE-3
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
Part Package Code | SIP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 13 pF | |
JEDEC-95 Code | TO-126 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 180 ns | |
Turn-on Time-Max (ton) | 115 ns |
Alternate Parts for 2N60G-T60-K
This table gives cross-reference parts and alternative options found for 2N60G-T60-K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N60G-T60-K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N65LG-TMA-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | 2N60G-T60-K vs 2N65LG-TMA-T |
PJU2N60 | Power Field-Effect Transistor, 2A I(D), 600V, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, PLASTIC PACKAGE-3 | PanJit Semiconductor | 2N60G-T60-K vs PJU2N60 |
PJD2NA60_L2_00001 | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | PanJit Semiconductor | 2N60G-T60-K vs PJD2NA60_L2_00001 |
2N65LG-TM3-T | Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | 2N60G-T60-K vs 2N65LG-TM3-T |
2N60LL-TMS2-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S2, 3 PIN | Unisonic Technologies Co Ltd | 2N60G-T60-K vs 2N60LL-TMS2-T |
2N60LG-TMA-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE, TO-251L, 3 PIN | Unisonic Technologies Co Ltd | 2N60G-T60-K vs 2N60LG-TMA-T |
2N60LG-T2Q-R | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Unisonic Technologies Co Ltd | 2N60G-T60-K vs 2N60LG-T2Q-R |
AP4002S | TRANSISTOR 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | 2N60G-T60-K vs AP4002S |
2N60LG-TA3-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | 2N60G-T60-K vs 2N60LG-TA3-T |
2N60L-TA3-T | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | 2N60G-T60-K vs 2N60L-TA3-T |