Datasheets
2N60LG-TMA-T by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE, TO-251L, 3 PIN

Part Details for 2N60LG-TMA-T by Unisonic Technologies Co Ltd

Overview of 2N60LG-TMA-T by Unisonic Technologies Co Ltd

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Part Details for 2N60LG-TMA-T

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2N60LG-TMA-T Part Data Attributes

2N60LG-TMA-T Unisonic Technologies Co Ltd
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2N60LG-TMA-T Unisonic Technologies Co Ltd Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, HALOGEN FREE, TO-251L, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Part Package Code TO-251
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 44 W
Pulsed Drain Current-Max (IDM) 8 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 150 ns
Turn-on Time-Max (ton) 120 ns

Alternate Parts for 2N60LG-TMA-T

This table gives cross-reference parts and alternative options found for 2N60LG-TMA-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N60LG-TMA-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N60LL-TMA-T Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE, TO-251L, 3 PIN Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N60LL-TMA-T
Part Number Description Manufacturer Compare
PJU2N60 Power Field-Effect Transistor, 2A I(D), 600V, 4.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, PLASTIC PACKAGE-3 PanJit Semiconductor 2N60LG-TMA-T vs PJU2N60
SMK0260IS 2A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, IPAK-3 Kodenshi Sensing 2N60LG-TMA-T vs SMK0260IS
L2N60D Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3/2 PIN LRC Leshan Radio Co Ltd 2N60LG-TMA-T vs L2N60D
2N60LL-T2Q-R Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N60LL-T2Q-R
2N65L-TMA-T Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251L, 3 PIN Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N65L-TMA-T
2N65LG-TA3-T Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N65LG-TA3-T
2N65G-TMS-T Power Field-Effect Transistor, 2A I(D), 650V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S, 3 PIN Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N65G-TMS-T
2N60LG-TND-R Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252D, 3/2 PIN Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N60LG-TND-R
2N60L-TN3-R Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N60L-TN3-R
2N60LG-T2Q-R Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Unisonic Technologies Co Ltd 2N60LG-TMA-T vs 2N60LG-T2Q-R

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