Datasheets
2N4376E3 by: Microsemi Corporation

Silicon Controlled Rectifier, 110A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN

Part Details for 2N4376E3 by Microsemi Corporation

Overview of 2N4376E3 by Microsemi Corporation

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Applications Consumer Electronics Audio and Video Systems

Part Details for 2N4376E3

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2N4376E3 Part Data Attributes

2N4376E3 Microsemi Corporation
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2N4376E3 Microsemi Corporation Silicon Controlled Rectifier, 110A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description TO-83, 2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.30.00.80
Configuration SINGLE
DC Gate Trigger Current-Max 100 mA
JEDEC-95 Code TO-208AD
JESD-30 Code O-MUPM-D2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style POST/STUD MOUNT
RMS On-state Current-Max 110 A
Repetitive Peak Off-state Voltage 1000 V
Repetitive Peak Reverse Voltage 1000 V
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position UPPER
Trigger Device Type SCR

Alternate Parts for 2N4376E3

This table gives cross-reference parts and alternative options found for 2N4376E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N4376E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N4376 Silicon Controlled Rectifier, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-94, Semitronics Corp 2N4376E3 vs 2N4376
2N4376 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN Microsemi Corporation 2N4376E3 vs 2N4376
Part Number Description Manufacturer Compare
55C120BE3 Silicon Controlled Rectifier, 86A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN Microsemi Corporation 2N4376E3 vs 55C120BE3
80RIA120PBF Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC, ROHS COMPLIANT, HERMETIC SEALED, GLASS METAL, TO-94, 3 PIN Vishay Intertechnologies 2N4376E3 vs 80RIA120PBF
N086RH12 Silicon Controlled Rectifier, 133.45 A, 1200 V, SCR IXYS UK Westcode 2N4376E3 vs N086RH12
2N4377E3 Silicon Controlled Rectifier, 110A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN Microsemi Corporation 2N4376E3 vs 2N4377E3
70C100BFE3 Silicon Controlled Rectifier, 110A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN Microsemi Corporation 2N4376E3 vs 70C100BFE3
80RIA120PBF Silicon Controlled Rectifier, 125A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC, ROHS COMPLIANT, METAL, TO-94, 3 PIN Vishay Semiconductors 2N4376E3 vs 80RIA120PBF
80RIA100PBF Silicon Controlled Rectifier, 125A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AC International Rectifier 2N4376E3 vs 80RIA100PBF
80RIA80 Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, HERMETIC SEALED, GLASS METAL, TO-94, 3 PIN International Rectifier 2N4376E3 vs 80RIA80
2N1804 Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN International Rectifier 2N4376E3 vs 2N1804
70C120BFE3 Silicon Controlled Rectifier, 110A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN Microsemi Corporation 2N4376E3 vs 70C120BFE3

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