UPA836TF-T1 vs UPA807T-KB-A feature comparison

UPA836TF-T1 NEC Compound Semiconductor Devices Ltd

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UPA807T-KB-A Renesas Electronics Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD RENESAS ELECTRONICS CORP
Package Description THIN, MINIMOLD PACKAGE-6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.03 A 0.01 A
Collector-Base Capacitance-Max 0.7 pF 0.6 pF
Collector-Emitter Voltage-Max 6 V 3 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 75
Highest Frequency Band ULTRA HIGH FREQUENCY BAND L BAND
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 12000 MHz 13000 MHz
Base Number Matches 2 1
Pin Count 6
JESD-609 Code e6
Moisture Sensitivity Level 1
Terminal Finish TIN BISMUTH

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