UF640G-AA3-R
vs
AP18N20GJ-HF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
ADVANCED POWER ELECTRONICS CORP
Package Description
SMALL OUTLINE, R-PDSO-G4
IN-LINE, R-PSIP-T3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
242 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
18 A
18 A
Drain-source On Resistance-Max
0.18 Ω
0.17 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
4
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
66 W
Pulsed Drain Current-Max (IDM)
72 A
60 A
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
TO-251
Pin Count
3
JEDEC-95 Code
TO-251
Qualification Status
Not Qualified
Compare UF640G-AA3-R with alternatives
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