There are no models available for this part yet.
Overview of AP18N20GJ-HF by Advanced Power Electronics Corp
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CAD Models for AP18N20GJ-HF by Advanced Power Electronics Corp
Part Data Attributes for AP18N20GJ-HF by Advanced Power Electronics Corp
|
|
|
|---|---|
|
Part Life Cycle Code
|
Contact Manufacturer
|
|
Ihs Manufacturer
|
ADVANCED POWER ELECTRONICS CORP
|
|
Part Package Code
|
TO-251
|
|
Package Description
|
IN-LINE, R-PSIP-T3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
200 V
|
|
Drain Current-Max (ID)
|
18 A
|
|
Drain-source On Resistance-Max
|
0.17 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-251
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
60 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for AP18N20GJ-HF
This table gives cross-reference parts and alternative options found for AP18N20GJ-HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP18N20GJ-HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRL640AJ69Z | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | AP18N20GJ-HF vs IRL640AJ69Z |
| UF640L-TQ2-R | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Unisonic Technologies Co Ltd | AP18N20GJ-HF vs UF640L-TQ2-R |
| UF640G-T2Q-R | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Unisonic Technologies Co Ltd | AP18N20GJ-HF vs UF640G-T2Q-R |
| LVP640P | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Lite-On Semiconductor Corporation | AP18N20GJ-HF vs LVP640P |
| UF640L-AA3-R | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Unisonic Technologies Co Ltd | AP18N20GJ-HF vs UF640L-AA3-R |
| STB19NB20-1 | 19A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TABLESS TO-220, I2PAK-3 | STMicroelectronics | AP18N20GJ-HF vs STB19NB20-1 |
| UF640L-TN3-T | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | AP18N20GJ-HF vs UF640L-TN3-T |
| UF640G-TN3-R | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | AP18N20GJ-HF vs UF640G-TN3-R |
| UF640G-AA3-R | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Unisonic Technologies Co Ltd | AP18N20GJ-HF vs UF640G-AA3-R |
| UF640L-TN3-R | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | AP18N20GJ-HF vs UF640L-TN3-R |