TK28N65W5,S1F vs SIHP33N60E-GE3 feature comparison

TK28N65W5,S1F Toshiba America Electronic Components

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SIHP33N60E-GE3 Vishay Intertechnologies

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Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP VISHAY INTERTECHNOLOGY INC
Package Description , FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Factory Lead Time 53 Weeks, 1 Day 14 Weeks
Samacsys Manufacturer Toshiba Vishay
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Avalanche Energy Rating (Eas) 793 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 278 W
Pulsed Drain Current-Max (IDM) 88 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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