TK28N65W5,S1F
vs
SIHP33N60E-GE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TOSHIBA CORP
VISHAY INTERTECHNOLOGY INC
Package Description
,
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
53 Weeks, 1 Day
14 Weeks
Samacsys Manufacturer
Toshiba
Vishay
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
1
1
Pbfree Code
Yes
Rohs Code
Yes
Avalanche Energy Rating (Eas)
793 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
33 A
Drain-source On Resistance-Max
0.099 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
278 W
Pulsed Drain Current-Max (IDM)
88 A
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare TK28N65W5,S1F with alternatives
Compare SIHP33N60E-GE3 with alternatives