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Transistors / Power Field-Effect Transistors / TK28N65W5,S1F
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TK28N65W5,S1F by: Toshiba America Electronic Components

Power Field-Effect Transistor

Part Details for TK28N65W5,S1F by Toshiba America Electronic Components

Overview of TK28N65W5,S1F by Toshiba America Electronic Components

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for TK28N65W5,S1F

Part # Distributor Description Stock Price Buy
DISTI # 264-TK28N65W5S1F-ND
DigiKey X35 PB-F POWER MOSFET TRANSISTOR Min Qty: 1 Lead time: 20 Weeks Container: Tube 18
In Stock
  • 1 $7.0600
  • 10 $4.7760
  • 100 $3.4803
  • 500 $2.9975
$2.9975 / $7.0600 Buy Now
DISTI # TK28N65W5,S1F
Avnet Americas MOSFET N-Channel Enhancement Mode 650V 3-Pin TO-247 - Rail/Tube (Alt: TK28N65W5,S1F) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 30 $3.6689
  • 60 $3.5730
  • 120 $3.4052
  • 180 $3.3092
  • 240 $3.2373
  • 300 $3.1414
  • 3,000 $3.0694
$3.0694 / $3.6689 Buy Now
DISTI # 757-TK28N65W5S1F
Mouser Electronics MOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS RoHS: Compliant 0
  • 1 $6.8700
  • 10 $4.7800
  • 30 $4.4600
  • 60 $3.4800
  • 270 $2.9900
$2.9900 / $6.8700 Order Now

Part Details for TK28N65W5,S1F

TK28N65W5,S1F CAD Models

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TK28N65W5,S1F Part Data Attributes

Parametric Data
TK28N65W5,S1F Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TK28N65W5,S1F Toshiba America Electronic Components Power Field-Effect Transistor
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Toshiba
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for TK28N65W5,S1F

This table gives cross-reference parts and alternative options found for TK28N65W5,S1F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK28N65W5,S1F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SP000088490 Power Field-Effect Transistor, Infineon Technologies AG TK28N65W5,S1F vs SP000088490
SIHG33N65EF-GE3 Power Field-Effect Transistor, 31.6A I(D), 650V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies TK28N65W5,S1F vs SIHG33N65EF-GE3
IPB65R110CFD Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG TK28N65W5,S1F vs IPB65R110CFD
IPI60R099CPXKSA1 Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG TK28N65W5,S1F vs IPI60R099CPXKSA1
IPW60R099CPA Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG TK28N65W5,S1F vs IPW60R099CPA
TK31V60W Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components TK28N65W5,S1F vs TK31V60W
IPW60R099P7 Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Infineon Technologies AG TK28N65W5,S1F vs IPW60R099P7
STW36NM60N N-channel 600 V, 0.092 Ohm, 29 A MDmesh(TM) II Power MOSFET in TO-247 STMicroelectronics TK28N65W5,S1F vs STW36NM60N
IPL65R070C7 Power Field-Effect Transistor, 28A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4 Infineon Technologies AG TK28N65W5,S1F vs IPL65R070C7
IPB60R125CPATMA1 Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG TK28N65W5,S1F vs IPB60R125CPATMA1

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