TK28N65W5,S1F vs IPB60R099CS feature comparison

TK28N65W5,S1F Toshiba America Electronic Components

Buy Now Datasheet

IPB60R099CS Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP INFINEON TECHNOLOGIES AG
Package Description , SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Toshiba
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code D2PAK
Pin Count 4
Avalanche Energy Rating (Eas) 800 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 93 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare TK28N65W5,S1F with alternatives

Compare IPB60R099CS with alternatives