TIP120
vs
JAN2N5660
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
SILICON TRANSISTOR CORP
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
5 A
2 A
Collector-Emitter Voltage-Max
60 V
200 V
Configuration
DARLINGTON
SINGLE
DC Current Gain-Min (hFE)
1000
40
JEDEC-95 Code
TO-220AB
TO-213
JESD-30 Code
R-PSFM-T3
O-MBFM-P2
Number of Elements
1
1
Number of Terminals
3
2
Operating Temperature-Max
150 °C
200 °C
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
RECTANGULAR
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
65 W
20 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
PIN/PEG
Terminal Position
SINGLE
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Case Connection
COLLECTOR
JESD-609 Code
e0
Reference Standard
MIL
Terminal Finish
Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT)
20 MHz
Compare TIP120 with alternatives
Compare JAN2N5660 with alternatives