TGL34-51A
vs
MQ1N8168US
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
MICROCHIP TECHNOLOGY INC
Package Description
SOD-80, MELF-2
MELF-2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
53.6 V
Breakdown Voltage-Min
48.5 V
48.5 V
Breakdown Voltage-Nom
51.05 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
70.1 V
70.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JESD-30 Code
O-PELF-R2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
150 W
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-50 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
MIL-STD-750
IEC-61000-4-2, 4-4; MIL-19500
Rep Pk Reverse Voltage-Max
43.6 V
43 V
Reverse Current-Max
5 µA
Reverse Test Voltage
43.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
1
1
Factory Lead Time
25 Weeks
Compare TGL34-51A with alternatives
Compare MQ1N8168US with alternatives