SUD06N10-225L-E3
vs
RFD14N06LSM
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
VISHAY SILICONIX
HARRIS SEMICONDUCTOR
Part Package Code
TO-252
Package Description
LEAD FREE PACKAGE-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
60 V
Drain Current-Max (ID)
6.5 A
14 A
Drain-source On Resistance-Max
0.2 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN OVER NICKEL
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Power Dissipation Ambient-Max
48 W
Power Dissipation-Max (Abs)
40 W
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
60 ns
Compare SUD06N10-225L-E3 with alternatives
Compare RFD14N06LSM with alternatives