RFD14N06LSM vs BUK7506-75B feature comparison

RFD14N06LSM Harris Semiconductor

Buy Now Datasheet

BUK7506-75B Nexperia

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 75 V
Drain Current-Max (ID) 14 A 75 A
Drain-source On Resistance-Max 0.1 Ω 0.0056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 48 W
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns
Base Number Matches 3 3
Factory Lead Time 4 Weeks
Date Of Intro 2017-02-01
Avalanche Energy Rating (Eas) 852 mJ
Pulsed Drain Current-Max (IDM) 638 A

Compare RFD14N06LSM with alternatives

Compare BUK7506-75B with alternatives