STP100N6F7 vs IPB100N06S2L05ATMA1 feature comparison

STP100N6F7 STMicroelectronics

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IPB100N06S2L05ATMA1 Infineon Technologies AG

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Package Description TO-220, 3 PIN GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 26 Weeks 4 Weeks
Samacsys Manufacturer STMicroelectronics Infineon
Avalanche Energy Rating (Eas) 200 mJ 810 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 100 A 100 A
Drain-source On Resistance-Max 0.0056 Ω 0.0056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 400 A
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature LOGIC LEVEL COMPATIBLE

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Compare IPB100N06S2L05ATMA1 with alternatives