IPB100N06S2L05ATMA1 vs IPB100N06S2L-05 feature comparison

IPB100N06S2L05ATMA1 Infineon Technologies AG

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IPB100N06S2L-05 Infineon Technologies AG

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 3 PIN GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon Infineon
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 810 mJ 810 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 100 A 100 A
Drain-source On Resistance-Max 0.0056 Ω 0.0056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 400 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code D2PAK
Pin Count 4
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 245
Power Dissipation-Max (Abs) 300 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare IPB100N06S2L05ATMA1 with alternatives

Compare IPB100N06S2L-05 with alternatives