IPB100N06S2L05ATMA1
vs
PSMN5R2-60YLX
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NEXPERIA
|
Package Description |
GREEN, PLASTIC, TO-263, 3 PIN
|
SMALL OUTLINE, R-PSSO-G4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
13 Weeks
|
Samacsys Manufacturer |
Infineon
|
Nexperia
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
810 mJ
|
127 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
60 V
|
Drain Current-Max (ID) |
100 A
|
100 A
|
Drain-source On Resistance-Max |
0.0056 Ω
|
0.006 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
MO-235
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
400 A
|
479 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
SOIC
|
Pin Count |
|
4
|
Manufacturer Package Code |
|
SOT669
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Reference Standard |
|
IEC-60134
|
Terminal Finish |
|
TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IPB100N06S2L05ATMA1 with alternatives
Compare PSMN5R2-60YLX with alternatives