IPB100N06S2L05ATMA1 vs PSMN5R2-60YLX feature comparison

IPB100N06S2L05ATMA1 Infineon Technologies AG

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PSMN5R2-60YLX Nexperia

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Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG NEXPERIA
Package Description GREEN, PLASTIC, TO-263, 3 PIN SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 13 Weeks
Samacsys Manufacturer Infineon Nexperia
Additional Feature LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Avalanche Energy Rating (Eas) 810 mJ 127 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 100 A 100 A
Drain-source On Resistance-Max 0.0056 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB MO-235
JESD-30 Code R-PSSO-G2 R-PSSO-G4
Number of Elements 1 1
Number of Terminals 2 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 479 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code SOIC
Pin Count 4
Manufacturer Package Code SOT669
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard IEC-60134
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING

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