STB57N65M5
vs
STI57N65M5
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
STMICROELECTRONICS
Package Description
ROHS COMPLIANT, TO-220, 3 PIN
IN-LINE, R-PSIP-T3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
14 Weeks
Samacsys Manufacturer
STMicroelectronics
STMicroelectronics
Avalanche Energy Rating (Eas)
960 mJ
960 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
650 V
Drain Current-Max (ID)
42 A
42 A
Drain-source On Resistance-Max
0.063 Ω
0.063 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-262AA
JESD-30 Code
R-PSFM-T3
R-PSIP-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
IN-LINE
Peak Reflow Temperature (Cel)
245
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
168 A
168 A
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare STB57N65M5 with alternatives
Compare STI57N65M5 with alternatives