STB57N65M5 vs IPB60R099C6 feature comparison

STB57N65M5 STMicroelectronics

Buy Now Datasheet

IPB60R099C6 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, TO-220, 3 PIN SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics Infineon
Avalanche Energy Rating (Eas) 960 mJ 796 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 42 A 37.9 A
Drain-source On Resistance-Max 0.063 Ω 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 168 A 112 A
Surface Mount NO YES
Terminal Finish Matte Tin (Sn) - annealed Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code D2PAK
Pin Count 4
Power Dissipation-Max (Abs) 278 W
Qualification Status Not Qualified

Compare STB57N65M5 with alternatives

Compare IPB60R099C6 with alternatives