STB11NM60-1
vs
IRF840LCLPBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
STMICROELECTRONICS
|
VISHAY SILICONIX
|
Part Package Code |
TO-262AA
|
TO-262AA
|
Package Description |
I2PAK-3
|
IN-LINE, R-PSIP-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
350 mJ
|
510 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
500 V
|
Drain Current-Max (ID) |
11 A
|
8 A
|
Drain-source On Resistance-Max |
0.45 Ω
|
0.85 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
TO-262AA
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
110 W
|
|
Pulsed Drain Current-Max (IDM) |
44 A
|
28 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Samacsys Manufacturer |
|
Vishay
|
Additional Feature |
|
AVALANCHE RATED
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare STB11NM60-1 with alternatives
Compare IRF840LCLPBF with alternatives