STB11NM60-1
vs
FQI6N60TU
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-262AA
TO-262
Package Description
I2PAK-3
IN-LINE, R-PSIP-T3
Pin Count
3
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
350 mJ
440 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
11 A
6.2 A
Drain-source On Resistance-Max
0.45 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-262AA
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e3
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
110 W
3.13 W
Pulsed Drain Current-Max (IDM)
44 A
24.8 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare STB11NM60-1 with alternatives
Compare FQI6N60TU with alternatives