FQI6N60TU
vs
2SK3688-01L
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
FUJI ELECTRIC CO LTD
Part Package Code
TO-262
TO-220AB
Package Description
IN-LINE, R-PSIP-T3
IN-LINE, R-PSIP-T3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
440 mJ
242.7 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
6.2 A
16 A
Drain-source On Resistance-Max
1.5 Ω
0.57 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
3.13 W
270 W
Pulsed Drain Current-Max (IDM)
24.8 A
64 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare FQI6N60TU with alternatives
Compare 2SK3688-01L with alternatives