FQI6N60TU vs 2SK3688-01L feature comparison

FQI6N60TU Fairchild Semiconductor Corporation

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2SK3688-01L Fuji Electric Co Ltd

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP FUJI ELECTRIC CO LTD
Part Package Code TO-262 TO-220AB
Package Description IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 440 mJ 242.7 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 6.2 A 16 A
Drain-source On Resistance-Max 1.5 Ω 0.57 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 3.13 W 270 W
Pulsed Drain Current-Max (IDM) 24.8 A 64 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

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