SPU08P06P
vs
FQA7N80C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
FAIRCHILD SEMICONDUCTOR CORP
Package Description
IN-LINE, R-PSIP-T3
TO-3P, 3 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
800 V
Drain Current-Max (ID)
8.8 A
7 A
Drain-source On Resistance-Max
0.3 Ω
1.9 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Part Package Code
TO-3P
Pin Count
3
Avalanche Energy Rating (Eas)
580 mJ
JESD-609 Code
e3
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
198 W
Pulsed Drain Current-Max (IDM)
28 A
Terminal Finish
MATTE TIN
Transistor Application
SWITCHING
Compare SPU08P06P with alternatives
Compare FQA7N80C with alternatives