SPU08P06P
vs
SSS6N70A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
ROCHESTER ELECTRONICS LLC
Package Description
IN-LINE, R-PSIP-T3
TO-220F, 3 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
700 V
Drain Current-Max (ID)
8.8 A
4 A
Drain-source On Resistance-Max
0.3 Ω
1.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
Pbfree Code
Rohs Code
Part Package Code
TO-220F
Pin Count
3
Avalanche Energy Rating (Eas)
560 mJ
Case Connection
ISOLATED
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
24 A
Terminal Finish
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare SPU08P06P with alternatives
Compare SSS6N70A with alternatives