SPB18P06P
vs
RFD8P06ESM9A
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
HARRIS SEMICONDUCTOR
|
Part Package Code |
D2PAK
|
|
Package Description |
PLASTIC, TO-263, 3 PIN
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
unknown
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED, ESD PROTECTED
|
Avalanche Energy Rating (Eas) |
151 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
18.7 A
|
8 A
|
Drain-source On Resistance-Max |
0.13 Ω
|
0.3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-252AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
220
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
74.8 A
|
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
NOT SPECIFIED
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
3
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.29.00.95
|
Operating Temperature-Max |
|
175 °C
|
Power Dissipation Ambient-Max |
|
48 W
|
Transistor Application |
|
SWITCHING
|
Turn-off Time-Max (toff) |
|
100 ns
|
Turn-on Time-Max (ton) |
|
70 ns
|
|
|
|
Compare SPB18P06P with alternatives
Compare RFD8P06ESM9A with alternatives