RFD8P06ESM9A vs SUD08P06-155L-E3 feature comparison

RFD8P06ESM9A Harris Semiconductor

Buy Now Datasheet

SUD08P06-155L-E3 Vishay Intertechnologies

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2 ROHS COMPLIANT PACKAGE-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, ESD PROTECTED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 8 A 8.4 A
Drain-source On Resistance-Max 0.3 Ω 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 48 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 70 ns
Base Number Matches 3 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-252
Pin Count 4
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 7.2 mJ
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 18 A
Terminal Finish MATTE TIN OVER NICKEL

Compare RFD8P06ESM9A with alternatives

Compare SUD08P06-155L-E3 with alternatives