SPB100N06S2L05DTMA1 vs IPB100N06S2L05ATMA1 feature comparison

SPB100N06S2L05DTMA1 Infineon Technologies AG

Buy Now Datasheet

IPB100N06S2L05ATMA1 Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description PLASTIC, TO-263, 3 PIN GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 810 mJ 810 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 100 A 100 A
Drain-source On Resistance-Max 0.0056 Ω 0.0056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 400 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon

Compare SPB100N06S2L05DTMA1 with alternatives

Compare IPB100N06S2L05ATMA1 with alternatives