SMBJ51C
vs
SMBJ51C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Contact Manufacturer
Ihs Manufacturer
JGD SEMICONDUCTORS CO LTD
SECOS CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Category CO2 Kg
8.54
8.54
Breakdown Voltage-Nom
63 V
Clamping Voltage-Max
91.1 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
YES
YES
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
5
Package Description
R-PDSO-C2
Compliance Temperature Grade
Military: -55C to +150C
Candidate List Date
2017-01-12
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V2.03a
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
67.05 V
Breakdown Voltage-Min
54.86 V
Configuration
SINGLE
Diode Element Material
SILICON
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Technology
AVALANCHE
Compare SMBJ51C with alternatives
Compare SMBJ51C with alternatives