SMBJ43AE3/TR13 vs SMBJ43HR5G feature comparison

SMBJ43AE3/TR13 Microchip Technology Inc

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SMBJ43HR5G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description SMBJ, 2 PIN SMB, 2 PIN
Reach Compliance Code not_compliant not_compliant
Factory Lead Time 16 Weeks
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 52.8 V 58.4 V
Breakdown Voltage-Min 47.8 V 47.8 V
Breakdown Voltage-Nom 50.3 V 53.1 V
Clamping Voltage-Max 69.4 V 76.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 3 W
Reference Standard IEC-61000-4-2, 4-4, 4-5 AEC-Q101
Rep Pk Reverse Voltage-Max 43 V 43 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 30
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50

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