BSC016N04LSG
vs
SI7738DP-T1-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PDSO-F5
SMALL OUTLINE, R-XDSO-C5
Pin Count
8
8
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
295 mJ
45 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
150 V
Drain Current-Max (ID)
100 A
7.7 A
Drain-source On Resistance-Max
0.0023 Ω
0.038 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
R-XDSO-C5
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
8
5
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
139 W
96 W
Pulsed Drain Current-Max (IDM)
400 A
30 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Matte Tin (Sn)
Terminal Form
FLAT
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Part Package Code
SOT
Compare BSC016N04LSG with alternatives
Compare SI7738DP-T1-GE3 with alternatives