SIHFR9120-GE3 vs IRFR9120-T1 feature comparison

SIHFR9120-GE3 Vishay Siliconix

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IRFR9120-T1 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY SILICONIX SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ 370 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 5.6 A 5.9 A
Drain-source On Resistance-Max 0.6 Ω 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 22 A 24 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 42 W
Turn-off Time-Max (toff) 48 ns
Turn-on Time-Max (ton) 79 ns

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