SIHFR9120-GE3
vs
IRFR9120
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
INTERNATIONAL RECTIFIER CORP
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
13 Weeks
|
|
Samacsys Manufacturer |
Vishay
|
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
210 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
5.6 A
|
5.6 A
|
Drain-source On Resistance-Max |
0.6 Ω
|
0.6 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
TO-252AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
240
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
42 W
|
42 W
|
Pulsed Drain Current-Max (IDM) |
22 A
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
8
|
Pbfree Code |
|
No
|
Part Package Code |
|
TO-252AA
|
Package Description |
|
DPAK-3
|
Pin Count |
|
3
|
HTS Code |
|
8541.29.00.95
|
Power Dissipation Ambient-Max |
|
42 W
|
|
|
|
Compare SIHFR9120-GE3 with alternatives
Compare IRFR9120 with alternatives