SIHB8N50D-GE3
vs
UF840G-TQ2-R
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
UNISONIC TECHNOLOGIES CO LTD
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
29 mJ
510 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8.7 A
8 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
156 W
Pulsed Drain Current-Max (IDM)
18 A
32 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
D2PAK
Pin Count
4
Additional Feature
AVALANCHE RATED
Qualification Status
Not Qualified
Compare SIHB8N50D-GE3 with alternatives
Compare UF840G-TQ2-R with alternatives