SIHB8N50D-GE3
vs
SIHP8N50D-E3
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PSSO-G2
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
29 mJ
29 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8.7 A
8.7 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
156 W
156 W
Pulsed Drain Current-Max (IDM)
18 A
18 A
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Compare SIHB8N50D-GE3 with alternatives
Compare SIHP8N50D-E3 with alternatives