SI9958DY
vs
NDS8852H
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SILICONIX INC
|
NATIONAL SEMICONDUCTOR CORP
|
| Part Package Code |
SOT
|
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G8
|
| Pin Count |
8
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Drain Current-Max (ID) |
3.5 A
|
4.3 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e0
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL AND P-CHANNEL
|
| Power Dissipation-Max (Abs) |
2 W
|
2.5 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Base Number Matches |
2
|
5
|
| HTS Code |
|
8541.29.00.95
|
| Configuration |
|
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain-source On Resistance-Max |
|
0.08 Ω
|
| JESD-30 Code |
|
R-PDSO-G8
|
| Number of Elements |
|
2
|
| Number of Terminals |
|
8
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation Ambient-Max |
|
2 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare SI9958DY with alternatives
Compare NDS8852H with alternatives