Part Details for NDS8852H by Texas Instruments
Overview of NDS8852H by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Part Details for NDS8852H
NDS8852H CAD Models
NDS8852H Part Data Attributes
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NDS8852H
Texas Instruments
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Datasheet
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NDS8852H
Texas Instruments
4300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation Ambient-Max | 2 W | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NDS8852H
This table gives cross-reference parts and alternative options found for NDS8852H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS8852H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI4500DY | Transistor, | Vishay Siliconix | NDS8852H vs SI4500DY |
FDS6682 | 14000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | Rochester Electronics LLC | NDS8852H vs FDS6682 |
NDS8839H | 5700mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | NDS8852H vs NDS8839H |
SI4430DY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | NDS8852H vs SI4430DY |
NDS8858H | 6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 | Rochester Electronics LLC | NDS8852H vs NDS8858H |
SI4156DY-T1-GE3 | Small Signal Field-Effect Transistor, 24A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Vishay Siliconix | NDS8852H vs SI4156DY-T1-GE3 |
SI5468DC-T1-GE3 | Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1206-8, CHIPFET-8 | Vishay Siliconix | NDS8852H vs SI5468DC-T1-GE3 |
FDS8690 | 14000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8 | Rochester Electronics LLC | NDS8852H vs FDS8690 |