SI7450DP-T1-GE3
vs
FQD18N20V2TF
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SILICONIX
ROCHESTER ELECTRONICS LLC
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-XDSO-C5
LEAD FREE, DPAK-3
Pin Count
8
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
3.2 A
15 A
Drain-source On Resistance-Max
0.09 Ω
0.14 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XDSO-C5
R-PDSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
5
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
5.2 W
Pulsed Drain Current-Max (IDM)
40 A
60 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
MATTE TIN
Terminal Form
C BEND
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Avalanche Energy Rating (Eas)
340 mJ
Compare SI7450DP-T1-GE3 with alternatives
Compare FQD18N20V2TF with alternatives