SI7450DP-T1-GE3 vs FQD12N20TM feature comparison

SI7450DP-T1-GE3 Vishay Siliconix

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FQD12N20TM Fairchild Semiconductor Corporation

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Pbfree Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer VISHAY SILICONIX FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT DPAK
Package Description SMALL OUTLINE, R-XDSO-C5 DPAK-3
Pin Count 8 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 3.2 A 9 A
Drain-source On Resistance-Max 0.09 Ω 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 5 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 5.2 W 55 W
Pulsed Drain Current-Max (IDM) 40 A 36 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN
Terminal Form C BEND GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code Yes
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 210 mJ
JEDEC-95 Code TO-252

Compare SI7450DP-T1-GE3 with alternatives

Compare FQD12N20TM with alternatives