SGP30N60
vs
HGT1S7N60A4DS9A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
ON SEMICONDUCTOR
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS, FAST
LOW CONDUCTION LOSS
Collector Current-Max (IC)
41 A
34 A
Collector-Emitter Voltage-Max
600 V
600 V
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
MOTOR CONTROL
POWER CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
391 ns
205 ns
Turn-on Time-Nom (ton)
76 ns
17 ns
Base Number Matches
2
4
Package Description
SMALL OUTLINE, R-PSSO-G2
Factory Lead Time
4 Weeks
Case Connection
COLLECTOR
Fall Time-Max (tf)
85 ns
Gate-Emitter Thr Voltage-Max
7 V
Gate-Emitter Voltage-Max
20 V
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
125 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Turn-off Time-Max (toff)
235 ns
VCEsat-Max
2.7 V
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