Part Details for HGT1S7N60A4DS9A by onsemi
Overview of HGT1S7N60A4DS9A by onsemi
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for HGT1S7N60A4DS9A
HGT1S7N60A4DS9A CAD Models
HGT1S7N60A4DS9A Part Data Attributes
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HGT1S7N60A4DS9A
onsemi
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Datasheet
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HGT1S7N60A4DS9A
onsemi
Insulated Gate Bipolar Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 34 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 85 ns | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 235 ns | |
| Turn-off Time-Nom (toff) | 205 ns | |
| Turn-on Time-Nom (ton) | 17 ns | |
| VCEsat-Max | 2.7 V |