SFT14GH vs 1N3611E3/TR feature comparison

SFT14GH Taiwan Semiconductor

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1N3611E3/TR Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 1.1 V
JESD-30 Code O-PALF-W2 O-LALF-W2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 5 µA 1 µA
Reverse Recovery Time-Max 0.035 µs
Surface Mount NO NO
Terminal Finish PURE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 5 1
Factory Lead Time 24 Weeks
Breakdown Voltage-Min 240 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Test Voltage 200 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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