SBT10100UYD_L2_00001
vs
GPAS1002RNG
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
LOW POWER LOSS
LOW POWER LOSS
Application
EFFICIENCY
EFFICIENCY
Case Connection
CATHODE
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.72 V
1.1 V
JEDEC-95 Code
TO-252AA
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
10 A
10 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
245
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
80 µA
5 µA
Surface Mount
YES
YES
Technology
SCHOTTKY
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Base Number Matches
1
1
Package Description
D2PAK-3/2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare SBT10100UYD_L2_00001 with alternatives
Compare GPAS1002RNG with alternatives