GPAS1002RNG
vs
MBRD10100-ATR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
D2PAK-3/2
DPAK-3/2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
LOW POWER LOSS
FREE WHEELING DIODE
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
CATHODE
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
0.9 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
10 A
10 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
1000 µA
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
1
Date Of Intro
2018-08-01
Reference Standard
AEC-Q101
Technology
SCHOTTKY
Compare GPAS1002RNG with alternatives
Compare MBRD10100-ATR with alternatives