GBU35J
vs
GBPC3506-BP
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
MICRO COMMERCIAL COMPONENTS CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
600 V
600 V
Case Connection
ISOLATED
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Non-rep Pk Forward Current-Max
400 A
400 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
155 °C
150 °C
Output Current-Max
35 A
35 A
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
600 V
600 V
Surface Mount
NO
NO
Base Number Matches
2
1
Package Description
S-PUFM-D4
HTS Code
8541.10.00.80
Samacsys Manufacturer
MCC
Diode Element Material
SILICON
JESD-30 Code
S-PUFM-D4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Terminals
4
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Reference Standard
UL RECOGNIZED
Reverse Current-Max
5 µA
Terminal Finish
Matte Tin (Sn)
Terminal Form
SOLDER LUG
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
10
Compare GBU35J with alternatives
Compare GBPC3506-BP with alternatives