SB252G
vs
GBPC2502-W
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
FORMOSA MICROSEMI CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
200 V
Case Connection
ISOLATED
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
300 A
350 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
25 A
25 A
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
200 V
200 V
Surface Mount
NO
NO
Base Number Matches
1
2
Package Description
S-PUFM-W4
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
S-PUFM-W4
Number of Terminals
4
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Reference Standard
UL RECOGNIZED
Terminal Form
WIRE
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SB252G with alternatives
Compare GBPC2502-W with alternatives