S34ML02G104BHI003 vs S34ML02G104BHI010 feature comparison

S34ML02G104BHI003 Cypress Semiconductor

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S34ML02G104BHI010 SkyHigh Memory Limited

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP SKYHIGH MEMORY LTD
Package Description BGA-63 BGA-63
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 25 ns 25 ns
Command User Interface YES YES
Common Flash Interface NO
Data Polling NO NO
Data Retention Time-Min 10 10
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 11 mm 11 mm
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Sectors/Size 2K 2K
Number of Terminals 63 63
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 128MX16 128MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Equivalence Code BGA63,10X12,32 BGA63,10X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Page Size 1K words 1K words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Programming Voltage 3.3 V 3.3 V
Qualification Status Not Qualified
Ready/Busy YES YES
Seated Height-Max 1 mm 1 mm
Sector Size 64K 64K
Standby Current-Max 0.00001 A 0.00005 A
Supply Current-Max 0.035 mA 0.03 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Toggle Bit NO YES
Type SLC NAND TYPE SLC NAND TYPE
Width 9 mm 9 mm
Base Number Matches 2 3
Moisture Sensitivity Level 3
Write Cycle Time-Max (tWC) 0.000025 ms

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