RN2401S,LF(D vs MUN2237T1G feature comparison

RN2401S,LF(D Toshiba America Electronic Components

Buy Now Datasheet

MUN2237T1G onsemi

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ONSEMI
Package Description SMALL OUTLINE, R-PDSO-G3 CASE 318D-04, SC-59, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 0.47
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 80
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP NPN
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W 0.338 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 2
Pbfree Code Yes
Part Package Code SC-59 3 LEAD
Pin Count 3
Manufacturer Package Code 318
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30

Compare RN2401S,LF(D with alternatives

Compare MUN2237T1G with alternatives