Findchips: Compare RN2401S,LF(D vs KSR1210

RN2401S,LF(D vs KSR1210 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Obsolete	Obsolete
Ihs Manufacturer	TOSHIBA CORP	SAMSUNG SEMICONDUCTOR INC
Package Description	SMALL OUTLINE, R-PDSO-G3	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown	unknown
ECCN Code	EAR99	EAR99
HTS Code	8541.21.00.75
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR
Collector Current-Max (IC)	0.1 A	0.1 A
Collector-Base Capacitance-Max	6 pF
Collector-Emitter Voltage-Max	50 V	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	30	100
JESD-30 Code	R-PDSO-G3	R-PSIP-T3
Number of Elements	1	1
Number of Terminals	3	3
Operating Temperature-Max	150 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	IN-LINE
Polarity/Channel Type	PNP	NPN
Power Dissipation Ambient-Max	0.2 W
Power Dissipation-Max (Abs)	0.2 W
Surface Mount	YES	NO
Terminal Form	GULL WING	THROUGH-HOLE
Terminal Position	DUAL	SINGLE
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Transition Frequency-Nom (fT)	200 MHz	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1	2
Part Package Code		TO-92S
Pin Count		3
Qualification Status		Not Qualified
	Transistors » Small Signal Bipolar Transistors	Transistors » Small Signal Bipolar Transistors