Findchips: Compare RN2401S,LF(D vs BCR183WE6327HTSA1

RN2401S,LF(D vs BCR183WE6327HTSA1 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Obsolete	Active
Ihs Manufacturer	TOSHIBA CORP	INFINEON TECHNOLOGIES AG
Package Description	SMALL OUTLINE, R-PDSO-G3	ROHS COMPLIANT PACKAGE-3
Reach Compliance Code	unknown	compliant
ECCN Code	EAR99	EAR99
HTS Code	8541.21.00.75
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)	0.1 A	0.1 A
Collector-Base Capacitance-Max	6 pF
Collector-Emitter Voltage-Max	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)	30	30
JESD-30 Code	R-PDSO-G3	R-PDSO-G3
Number of Elements	1	1
Number of Terminals	3	3
Operating Temperature-Max	150 °C	150 °C
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Polarity/Channel Type	PNP	PNP
Power Dissipation Ambient-Max	0.2 W
Power Dissipation-Max (Abs)	0.2 W
Surface Mount	YES	YES
Terminal Form	GULL WING	GULL WING
Terminal Position	DUAL	DUAL
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Transition Frequency-Nom (fT)	200 MHz	200 MHz
VCEsat-Max	0.3 V
Base Number Matches	1	1
Samacsys Manufacturer		Infineon
	Transistors » Small Signal Bipolar Transistors	Transistors » Small Signal Bipolar Transistors