RN1301(TE85L,F)
vs
BCR183E6327HTSA1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
End Of Life
Ihs Manufacturer
TOSHIBA CORP
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Toshiba
Infineon
Additional Feature
BUILT IN BAIS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
30
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.1 W
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
200 MHz
200 MHz
Base Number Matches
1
1
Pbfree Code
Factory Lead Time
4 Weeks
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
Tin (Sn)
Compare RN1301(TE85L,F) with alternatives
Compare BCR183E6327HTSA1 with alternatives